Analog and RF performance optimization for gate all around tunnel FET using broken-gap material
Abstract Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III–V uneven GAA TFET is s...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-10-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-22485-6 |
| _version_ | 1828164260942839808 |
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| author | Pankaj Kumar Kalyan Koley Bhubon C. Mech Ashish Maurya Subindu Kumar |
| author_facet | Pankaj Kumar Kalyan Koley Bhubon C. Mech Ashish Maurya Subindu Kumar |
| author_sort | Pankaj Kumar |
| collection | DOAJ |
| description | Abstract Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III–V uneven GAA TFET is studied by considering the uneven radius as elliptical in shape for all possible variations, which shows a significant impact on analog and RF figure of merits (FOMs). The performance of the optimized devices is compared with their circular structure and with their maximum deviation in elliptical geometry for all possible variations in device channel and gate oxide. The variations in its device channel and gate oxide have shown a significant impact on the performance of the device. The analog and RF FOMs are studied, including the transconductance generation factor (gm/IDS), intrinsic gain (gmRO), capacitances (CGS, CGD), cut-off frequency (fT), and gate delay (τm). |
| first_indexed | 2024-04-12T01:22:47Z |
| format | Article |
| id | doaj.art-13d8218c4ce140e295d854b0dfa32bb1 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-12T01:22:47Z |
| publishDate | 2022-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-13d8218c4ce140e295d854b0dfa32bb12022-12-22T03:53:43ZengNature PortfolioScientific Reports2045-23222022-10-0112111510.1038/s41598-022-22485-6Analog and RF performance optimization for gate all around tunnel FET using broken-gap materialPankaj Kumar0Kalyan Koley1Bhubon C. Mech2Ashish Maurya3Subindu Kumar4Department of Electronics Engineering, Indian Institutes of Technology, DhanbadDepartment of Electronics Engineering, Indian Institutes of Technology, DhanbadDepartment of Electronics Engineering, Indian Institutes of Technology, DhanbadDepartment of Electronics Engineering, Indian Institutes of Technology, DhanbadDepartment of Electronics Engineering, Indian Institutes of Technology, DhanbadAbstract Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III–V uneven GAA TFET is studied by considering the uneven radius as elliptical in shape for all possible variations, which shows a significant impact on analog and RF figure of merits (FOMs). The performance of the optimized devices is compared with their circular structure and with their maximum deviation in elliptical geometry for all possible variations in device channel and gate oxide. The variations in its device channel and gate oxide have shown a significant impact on the performance of the device. The analog and RF FOMs are studied, including the transconductance generation factor (gm/IDS), intrinsic gain (gmRO), capacitances (CGS, CGD), cut-off frequency (fT), and gate delay (τm).https://doi.org/10.1038/s41598-022-22485-6 |
| spellingShingle | Pankaj Kumar Kalyan Koley Bhubon C. Mech Ashish Maurya Subindu Kumar Analog and RF performance optimization for gate all around tunnel FET using broken-gap material Scientific Reports |
| title | Analog and RF performance optimization for gate all around tunnel FET using broken-gap material |
| title_full | Analog and RF performance optimization for gate all around tunnel FET using broken-gap material |
| title_fullStr | Analog and RF performance optimization for gate all around tunnel FET using broken-gap material |
| title_full_unstemmed | Analog and RF performance optimization for gate all around tunnel FET using broken-gap material |
| title_short | Analog and RF performance optimization for gate all around tunnel FET using broken-gap material |
| title_sort | analog and rf performance optimization for gate all around tunnel fet using broken gap material |
| url | https://doi.org/10.1038/s41598-022-22485-6 |
| work_keys_str_mv | AT pankajkumar analogandrfperformanceoptimizationforgateallaroundtunnelfetusingbrokengapmaterial AT kalyankoley analogandrfperformanceoptimizationforgateallaroundtunnelfetusingbrokengapmaterial AT bhuboncmech analogandrfperformanceoptimizationforgateallaroundtunnelfetusingbrokengapmaterial AT ashishmaurya analogandrfperformanceoptimizationforgateallaroundtunnelfetusingbrokengapmaterial AT subindukumar analogandrfperformanceoptimizationforgateallaroundtunnelfetusingbrokengapmaterial |