Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen
Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) expo...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-11-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/21/3876 |
| _version_ | 1797466977959149568 |
|---|---|
| author | Shiyong Huang Zhi Kai Ng Hongling Li Apoorva Chaturvedi Jian Wei Mark Lim Roland Yingjie Tay Edwin Hang Tong Teo Shuyan Xu Kostya (Ken) Ostrikov Siu Hon Tsang |
| author_facet | Shiyong Huang Zhi Kai Ng Hongling Li Apoorva Chaturvedi Jian Wei Mark Lim Roland Yingjie Tay Edwin Hang Tong Teo Shuyan Xu Kostya (Ken) Ostrikov Siu Hon Tsang |
| author_sort | Shiyong Huang |
| collection | DOAJ |
| description | Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O<sub>2</sub>/Ar/H<sub>2</sub> plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices. |
| first_indexed | 2024-03-09T18:46:41Z |
| format | Article |
| id | doaj.art-1402fd0b14df47bba8cc847f512173d4 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T18:46:41Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-1402fd0b14df47bba8cc847f512173d42023-11-24T06:10:38ZengMDPI AGNanomaterials2079-49912022-11-011221387610.3390/nano12213876Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic OxygenShiyong Huang0Zhi Kai Ng1Hongling Li2Apoorva Chaturvedi3Jian Wei Mark Lim4Roland Yingjie Tay5Edwin Hang Tong Teo6Shuyan Xu7Kostya (Ken) Ostrikov8Siu Hon Tsang9Temasek Laboratories@NTU, 50 Nanyang Drive, Singapore 637553, SingaporeTemasek Laboratories@NTU, 50 Nanyang Drive, Singapore 637553, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, SingaporeSchool of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, SingaporePlasma Sources and Applications Center, National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, SingaporePlasma Sources and Applications Center, National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, SingaporeSchool of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology (QUT), Brisbane, QLD 4000, AustraliaTemasek Laboratories@NTU, 50 Nanyang Drive, Singapore 637553, SingaporeStability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O<sub>2</sub>/Ar/H<sub>2</sub> plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices.https://www.mdpi.com/2079-4991/12/21/3876inductively coupled plasmaschemical vapor depositionboron nitrideprotective layerion bombardmentatomic oxygen |
| spellingShingle | Shiyong Huang Zhi Kai Ng Hongling Li Apoorva Chaturvedi Jian Wei Mark Lim Roland Yingjie Tay Edwin Hang Tong Teo Shuyan Xu Kostya (Ken) Ostrikov Siu Hon Tsang Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen Nanomaterials inductively coupled plasmas chemical vapor deposition boron nitride protective layer ion bombardment atomic oxygen |
| title | Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen |
| title_full | Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen |
| title_fullStr | Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen |
| title_full_unstemmed | Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen |
| title_short | Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen |
| title_sort | stability of wafer scale thin films of vertically aligned hexagonal bn nanosheets exposed to high energy ions and reactive atomic oxygen |
| topic | inductively coupled plasmas chemical vapor deposition boron nitride protective layer ion bombardment atomic oxygen |
| url | https://www.mdpi.com/2079-4991/12/21/3876 |
| work_keys_str_mv | AT shiyonghuang stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT zhikaing stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT honglingli stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT apoorvachaturvedi stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT jianweimarklim stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT rolandyingjietay stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT edwinhangtongteo stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT shuyanxu stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT kostyakenostrikov stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT siuhontsang stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen |