A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Abstract This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the over...

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Bibliographic Details
Main Authors: Jyi-Tsong Lin, Shao-Cheng Weng
Format: Article
Language:English
Published: Springer 2023-07-01
Series:Discover Nano
Subjects:
Control gate (CG)
Tunnel FET (TFET)
Subthreshold swing
Schottky contact
Line tunneling
Band-to-band tunneling (BTBT)
Online Access:https://doi.org/10.1186/s11671-023-03875-9

Internet

https://doi.org/10.1186/s11671-023-03875-9

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