Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

The effects of proton irradiation on CMOS Single-Photon Avalanche Diodes (SPADs) are investigated in this article. The I–V characteristics, dark count rate (DCR), and photon detection probability (PDP) of the CMOS SPADs were measured under 30 MeV and 52 MeV proton irradiations. Two types of SPAD, wi...

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Bibliographic Details
Main Authors: Mingzhu Xun, Yudong Li, Jie Feng, Chengfa He, Mingyu Liu, Qi Guo
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Electronics
Subjects:
CMOS SPAD
proton radiation
DCR
displacement damage
Online Access:https://www.mdpi.com/2079-9292/13/1/224

Internet

https://www.mdpi.com/2079-9292/13/1/224

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