Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation
Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for (100) Ga2O3. This is lower than the widely-used temperature...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0096245 |