Ir/Ni/W/Ni Ohmic contacts for n-type 3C-SiC grown on p-type silicon substrate
In this work, Ohmic contacts to n-type 3C-SiC grown on p-type Si substrate employing Ni layer and Ir/Ni/W/Ni multilayers were investigated. Specific contact resistances of 2.57 × 10 ^–4 Ω · cm ^2 and 2.74 × 10 ^–5 Ω · cm ^2 were achieved with Ni layer and Ir/Ni/W/Ni multilayers, respectively, at an...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abdf76 |