Ir/Ni/W/Ni Ohmic contacts for n-type 3C-SiC grown on p-type silicon substrate
In this work, Ohmic contacts to n-type 3C-SiC grown on p-type Si substrate employing Ni layer and Ir/Ni/W/Ni multilayers were investigated. Specific contact resistances of 2.57 × 10 ^–4 Ω · cm ^2 and 2.74 × 10 ^–5 Ω · cm ^2 were achieved with Ni layer and Ir/Ni/W/Ni multilayers, respectively, at an...
| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
IOP Publishing
2021-01-01
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| coleção: | Materials Research Express |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1088/2053-1591/abdf76 |