A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum effic...

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Bibliographic Details
Main Authors: Preethi Padmanabhan, Bruce Hancock, Shouleh Nikzad, L. Douglas Bell, Kees Kroep, Edoardo Charbon
Format: Article
Language:English
Published: MDPI AG 2018-02-01
Series:Sensors
Subjects:
Gallium nitride (GaN)
avalanche photodiodes (APDs)
UV imaging
CMOS technology
capacitive transimepdance amplifier (CTIA)
hybridization
3D integration
Online Access:http://www.mdpi.com/1424-8220/18/2/449

Internet

http://www.mdpi.com/1424-8220/18/2/449

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