A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology
Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum effic...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-02-01
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Series: | Sensors |
Subjects: | |
Online Access: | http://www.mdpi.com/1424-8220/18/2/449 |