Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Abstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band voltage (VFB) and its hysteresis with increasing nitrogen c...

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Bibliographic Details
Main Authors: Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem
Format: Article
Language:English
Published: Wiley-VCH 2024-03-01
Series:Advanced Electronic Materials
Subjects:
AlON
GaN
interfaces
Metal‐Oxide‐Semiconductor capacitor
post‐deposition anneal
Online Access:https://doi.org/10.1002/aelm.202300528

Internet

https://doi.org/10.1002/aelm.202300528

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