Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors
Abstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band voltage (VFB) and its hysteresis with increasing nitrogen c...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-03-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300528 |
| _version_ | 1797269986961522688 |
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| author | Pedro Fernandes Paes Pinto Rocha Mohammed Zeghouane Sarah Boubenia Franck Bassani Laura Vauche Eugénie Martinez William Vandendaele Marc Veillerot Bassem Salem |
| author_facet | Pedro Fernandes Paes Pinto Rocha Mohammed Zeghouane Sarah Boubenia Franck Bassani Laura Vauche Eugénie Martinez William Vandendaele Marc Veillerot Bassem Salem |
| author_sort | Pedro Fernandes Paes Pinto Rocha |
| collection | DOAJ |
| description | Abstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band voltage (VFB) and its hysteresis with increasing nitrogen concentration is reported. The increase in VFB is associated with the nitrogen content whereas the increase in hysteresis to the presence of impurities (hydroxyl groups and carbon‐related impurities). Alongside the nitrogen concentration, the impact of different post‐deposition annealing (PDA) temperatures is studied (400–800 °C). Stable AlON layers and interfaces with etched GaN substrates are reported with slight gallium oxide growth or gallium diffusion towards the dielectric layer. Finally, with increasing PDA temperature, an increase in VFB and a significant reduction of both VFB hysteresis and interface state density (Dit) are observed, notably at the measuring temperature of 150 °C. These results present a promising pathway toward more reliable and stable normally‐OFF GaN‐based MOS‐channel high electron mobility transistors (MOSc‐HEMTs). |
| first_indexed | 2024-04-25T01:57:06Z |
| format | Article |
| id | doaj.art-157d1d245c404fd39733d1877f0c92da |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-04-25T01:57:06Z |
| publishDate | 2024-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-157d1d245c404fd39733d1877f0c92da2024-03-07T15:46:04ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-03-01103n/an/a10.1002/aelm.202300528Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS CapacitorsPedro Fernandes Paes Pinto Rocha0Mohammed Zeghouane1Sarah Boubenia2Franck Bassani3Laura Vauche4Eugénie Martinez5William Vandendaele6Marc Veillerot7Bassem Salem8Univ. Grenoble Alpes CNRS CEA/LETI‐Minatec Grenoble INP LTM Grenoble F‐38054 FranceUniv. Grenoble Alpes CNRS CEA/LETI‐Minatec Grenoble INP LTM Grenoble F‐38054 FranceUniv. Grenoble Alpes CNRS CEA/LETI‐Minatec Grenoble INP LTM Grenoble F‐38054 FranceUniv. Grenoble Alpes CNRS CEA/LETI‐Minatec Grenoble INP LTM Grenoble F‐38054 FranceUniv. Grenoble Alpes CEA Leti Grenoble F‐38000 FranceUniv. Grenoble Alpes CEA Leti Grenoble F‐38000 FranceUniv. Grenoble Alpes CEA Leti Grenoble F‐38000 FranceUniv. Grenoble Alpes CEA Leti Grenoble F‐38000 FranceUniv. Grenoble Alpes CNRS CEA/LETI‐Minatec Grenoble INP LTM Grenoble F‐38054 FranceAbstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band voltage (VFB) and its hysteresis with increasing nitrogen concentration is reported. The increase in VFB is associated with the nitrogen content whereas the increase in hysteresis to the presence of impurities (hydroxyl groups and carbon‐related impurities). Alongside the nitrogen concentration, the impact of different post‐deposition annealing (PDA) temperatures is studied (400–800 °C). Stable AlON layers and interfaces with etched GaN substrates are reported with slight gallium oxide growth or gallium diffusion towards the dielectric layer. Finally, with increasing PDA temperature, an increase in VFB and a significant reduction of both VFB hysteresis and interface state density (Dit) are observed, notably at the measuring temperature of 150 °C. These results present a promising pathway toward more reliable and stable normally‐OFF GaN‐based MOS‐channel high electron mobility transistors (MOSc‐HEMTs).https://doi.org/10.1002/aelm.202300528AlONGaNinterfacesMetal‐Oxide‐Semiconductor capacitorpost‐deposition anneal |
| spellingShingle | Pedro Fernandes Paes Pinto Rocha Mohammed Zeghouane Sarah Boubenia Franck Bassani Laura Vauche Eugénie Martinez William Vandendaele Marc Veillerot Bassem Salem Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors Advanced Electronic Materials AlON GaN interfaces Metal‐Oxide‐Semiconductor capacitor post‐deposition anneal |
| title | Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors |
| title_full | Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors |
| title_fullStr | Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors |
| title_full_unstemmed | Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors |
| title_short | Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors |
| title_sort | impact of nitrogen concentration and post deposition annealing on electrical properties of alon etched n gan mos capacitors |
| topic | AlON GaN interfaces Metal‐Oxide‐Semiconductor capacitor post‐deposition anneal |
| url | https://doi.org/10.1002/aelm.202300528 |
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