Enhancing GaN/Al<sub>x</sub>Ga<sub>1−x</sub>N-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement

Enhancing GaN/Al<sub>x</sub>Ga<sub>1−x</sub>N-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement

This research explores the architecture and efficacy of GaN/Al<sub>x</sub>Ga<sub>1−x</sub>N-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication tec...

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Bibliographic Details
Main Authors: Lingxia Zhang, Hualong Wu, Chenguang He, Kang Zhang, Yunzhou Liu, Qiao Wang, Longfei He, Wei Zhao, Zhitao Chen
Format: Article
Language:English
Published: MDPI AG 2024-06-01
Series:Micromachines
Subjects:
ultraviolet photodetector
GaN/AlGaN phototransistors
graded base
Online Access:https://www.mdpi.com/2072-666X/15/6/778

Internet

https://www.mdpi.com/2072-666X/15/6/778

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