<italic>H</italic>-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun
A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full <inline-formula> <tex-math notation="LaTeX">$H$ </tex-math></inline-formula>-band (220–320 GHz). A cascode transistor is employed as a power cell to achieve high gain...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9931108/ |