Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing

Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a silicon-on-insulator wafer partially amorphize...

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Bibliographic Details
Main Authors: Toshiyuki Tabata, Fabien Roze, Pablo Acosta Alba, Sebastien Halty, Pierre-Edouard Raynal, Imen Karmous, Sebastien Kerdiles, Fulvio Mazzamuto
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Laser annealing
solid phase recrystallization
silicon-on-insulator
Online Access:https://ieeexplore.ieee.org/document/9631962/

Internet

https://ieeexplore.ieee.org/document/9631962/

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