Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation

Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation

<p>Abstract</p><p>In this study, details of Berkovich nanoindentation-induced mechanical deformation mechanisms of metal-organic chemical-vapor deposition-derived GaN thin films have been systematic investigated with the aid of the cathodoluminescence (CL) and the cross-sectional t...

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Bibliographic Details
Main Authors: Teng I-Ju, Lu Jian-Ming, Jian Sheng-Rui
Format: Article
Language:English
Published: SpringerOpen 2008-01-01
Series:Nanoscale Research Letters
Subjects:
GaN
MOCVD
Nanoindentation
Cathodoluminescence
Focused ion beam
Transmission electron microscopy
Online Access:http://dx.doi.org/10.1007/s11671-008-9130-8

Internet

http://dx.doi.org/10.1007/s11671-008-9130-8

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