SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (TMOS) with depletion-mode pMOS (D-pMOS) is proposed and investigated via TCAD simulation. It has an auxiliary gate electrode that controls the electrical connections of P-shield layers under the trench bottom through the D-pMOS...

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Bibliographic Details
Main Authors: Hengyu Yu, Limeng Shi, Monikuntala Bhattacharya, Michael Jin, Jiashu Qian, Anant K. Agarwal
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Electronics
Subjects:
4H-SiC
trench MOSFET
depletion-mode pMOS
short circuit capability
switching performance
Online Access:https://www.mdpi.com/2079-9292/12/23/4764

Internet

https://www.mdpi.com/2079-9292/12/23/4764

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