Comprehensive Modeling of the Depletion-mode MOS Capacitor for Circuit Simulation

A comprehensive model is developed for a MOS capacitor implemented using an n-channel depletion-mode MOSFET fabricated in a submicron CMOS technology, which accounts for the voltage dependence of the MOS capacitance over the entire range of operating voltages. Notably, the model, whose active compon...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron: Shahriar Jamasb, Mohammad Bagher Khodabakhshi
Fformat: Erthygl
Iaith:fas
Cyhoeddwyd: Semnan University 2020-10-01
Cyfres:مجله مدل سازی در مهندسی
Pynciau:
Mynediad Ar-lein:https://modelling.semnan.ac.ir/article_4676_ab855611ec49cbe2c1560ce12cd287da.pdf