Comprehensive Modeling of the Depletion-mode MOS Capacitor for Circuit Simulation
A comprehensive model is developed for a MOS capacitor implemented using an n-channel depletion-mode MOSFET fabricated in a submicron CMOS technology, which accounts for the voltage dependence of the MOS capacitance over the entire range of operating voltages. Notably, the model, whose active compon...
| Main Authors: | , |
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| Format: | Article |
| Language: | fas |
| Published: |
Semnan University
2020-10-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_4676_ab855611ec49cbe2c1560ce12cd287da.pdf |