Influence of parasitic coupling on current sharing in paralleled SiC MOSFET devices
Abstract This paper comprehensively investigates the current distribution behaviours of paralleled SiC MOSFET devices under the parasitic coupling between gate and power loops. Three types of connection that are commonly adopted in actual applications, comprising common source connection (CSC), Kelv...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-08-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12292 |