Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

The effect of in-situ exposure of n-GaN damaged by Cl2 plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 × 1016 cm−2, recovered t...

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Bibliographic Details
Main Authors: Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Yutaka Tokuda, Makoto Sekine, Masaru Hori
Format: Article
Language:English
Published: AIP Publishing LLC 2012-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4729448