Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature
The effect of in-situ exposure of n-GaN damaged by Cl2 plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 × 1016 cm−2, recovered t...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2012-06-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4729448 |