Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to characterize the RTN of subthreshold currents approx...

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Bibliographic Details
Main Authors: Calvin Yi-Ping Chao, Meng-Hsu Wu, Shang-Fu Yeh, Chin-Hao Chang, Chi-Lin Lee, Chin Yin, Kuo-Yu Chou, Honyih Tu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Random noise (RN)
random telegraph noise (RTN)
random telegraph signal (RTS)
CMOS image sensor (CIS)
correlated double sampling (CDS)
subthreshold current
Online Access:https://ieeexplore.ieee.org/document/9577145/

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https://ieeexplore.ieee.org/document/9577145/

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