The Vital Role of Ultra Thin Silicon Oxide Gate Dielectrics
In dry thermal oxidation process with Si, the growth rate of the initial parts of the reaction is currently modeled with additional terms; besides the usual linear parabolic was time dependent. However, due to limitation in the process set up, it was found in literature and in patent; these methods...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Babol Noshirvani University of Technology
2012-01-01
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| Series: | Iranica Journal of Energy and Environment |
| Subjects: | |
| Online Access: | http://www.ijee.net/Journal/ijee/vol3/no4/6.pdf |