Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

The resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, the salicide poly-Si microbolometer with Al grating structure is demonstrated in the standard CMOS pr...

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Bibliographic Details
Main Authors: Yaozu Guo, Haolan Ma, Ke Wang, Li Zhang, Feng Yan, Ping Han, Xiaoli Ji
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
Al grating
CMOS process
microbolometer
resonant cavity
salicide poly-Si thermistors
Online Access:https://ieeexplore.ieee.org/document/10044965/

Internet

https://ieeexplore.ieee.org/document/10044965/

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