Metal-semiconductor phase transition in nanoheteroepitaxial structures technology
Relevance of the work is caused by the necessity of obtain nanogeteroepitaxial structures with quantum dots to design and to develop the production of semiconductor energy high-performance devices. The main aim of the study is to identify the reasons of forming wide-receiving semiconductor material...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Tomsk Polytechnic University
2019-05-01
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| Series: | Известия Томского политехнического университета: Инжиниринг георесурсов |
| Subjects: | |
| Online Access: | http://izvestiya.tpu.ru/archive/article/view/1430 |