Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach

Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach

The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 10<sup>19</sup> cm<sup>−3</sup> and...

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Bibliographic Details
Main Authors: D. Parajuli, Deb Kumar Shah, Devendra KC, Subhash Kumar, Mira Park, Bishweshwar Pant
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Electrochem
Subjects:
InGaN solar cell
doping concentration
thickness
single junction
efficiency
Silvaco ATLAS simulation
Online Access:https://www.mdpi.com/2673-3293/3/3/28

Internet

https://www.mdpi.com/2673-3293/3/3/28

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