A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States

A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States

Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin epitaxial and defect-free Ge layer on a Si on insu...

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Bibliographic Details
Main Authors: Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Larissa Kuhberger, Daniel Popp, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium
reconfigurable field-effect transistor
symmetric on-state
wired-logic
Online Access:https://ieeexplore.ieee.org/document/10382178/

Internet

https://ieeexplore.ieee.org/document/10382178/

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