A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States
Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin epitaxial and defect-free Ge layer on a Si on insu...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10382178/ |
| _version_ | 1797335541530755072 |
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| author | Andreas Fuchsberger Lukas Wind Daniele Nazzari Larissa Kuhberger Daniel Popp Johannes Aberl Enrique Prado Navarrete Moritz Brehm Lilian Vogl Peter Schweizer Sebastian Lellig Xavier Maeder Masiar Sistani Walter M. Weber |
| author_facet | Andreas Fuchsberger Lukas Wind Daniele Nazzari Larissa Kuhberger Daniel Popp Johannes Aberl Enrique Prado Navarrete Moritz Brehm Lilian Vogl Peter Schweizer Sebastian Lellig Xavier Maeder Masiar Sistani Walter M. Weber |
| author_sort | Andreas Fuchsberger |
| collection | DOAJ |
| description | Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin epitaxial and defect-free Ge layer on a Si on insulator platform. To evade the commonly observed process variability of Ni-germanides, Al-Si-Ge multi-heterojunction contacts have been employed, providing process stability and the required equal injection capabilities for electrons and holes. Integration into a three top-gate transistor enables effective polarity control and efficient leakage current suppression to limit static power dissipation. Exploiting the advantages of multi-gate transistors, combinational wired-AND gates are shown to be capable of extending a single transistor to a logic gate. Notably, the obtained Al-Si-Ge multi-heterojunction reconfigurable transistors constitute the first CMOS compatible platform to combine efficient polarity control enabling the envisioned performance enhancements of Ge based reconfigurable transistors. |
| first_indexed | 2024-03-08T08:38:57Z |
| format | Article |
| id | doaj.art-16ff7e9f84d742d487e8c8349d88f41c |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T08:38:57Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-16ff7e9f84d742d487e8c8349d88f41c2024-02-02T00:00:49ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-0112838710.1109/JEDS.2024.335020910382178A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-StatesAndreas Fuchsberger0https://orcid.org/0009-0003-2848-0480Lukas Wind1https://orcid.org/0000-0002-1458-1358Daniele Nazzari2https://orcid.org/0000-0003-4267-3142Larissa Kuhberger3Daniel Popp4Johannes Aberl5https://orcid.org/0000-0002-2308-7538Enrique Prado Navarrete6https://orcid.org/0000-0002-8233-6979Moritz Brehm7https://orcid.org/0000-0002-5629-5923Lilian Vogl8https://orcid.org/0000-0001-8272-3146Peter Schweizer9https://orcid.org/0000-0002-8873-0950Sebastian Lellig10Xavier Maeder11Masiar Sistani12https://orcid.org/0000-0001-5730-234XWalter M. Weber13https://orcid.org/0000-0001-9504-5671Institute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaInstitute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaInstitute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaInstitute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaInstitute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, AustriaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, AustriaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, AustriaSwiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Thun, SwitzerlandSwiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Thun, SwitzerlandSwiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Thun, SwitzerlandSwiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Thun, SwitzerlandInstitute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaInstitute of Solid State Electronics, Technische Universität Wien, Vienna, AustriaHere, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin epitaxial and defect-free Ge layer on a Si on insulator platform. To evade the commonly observed process variability of Ni-germanides, Al-Si-Ge multi-heterojunction contacts have been employed, providing process stability and the required equal injection capabilities for electrons and holes. Integration into a three top-gate transistor enables effective polarity control and efficient leakage current suppression to limit static power dissipation. Exploiting the advantages of multi-gate transistors, combinational wired-AND gates are shown to be capable of extending a single transistor to a logic gate. Notably, the obtained Al-Si-Ge multi-heterojunction reconfigurable transistors constitute the first CMOS compatible platform to combine efficient polarity control enabling the envisioned performance enhancements of Ge based reconfigurable transistors.https://ieeexplore.ieee.org/document/10382178/Germaniumreconfigurable field-effect transistorsymmetric on-statewired-logic |
| spellingShingle | Andreas Fuchsberger Lukas Wind Daniele Nazzari Larissa Kuhberger Daniel Popp Johannes Aberl Enrique Prado Navarrete Moritz Brehm Lilian Vogl Peter Schweizer Sebastian Lellig Xavier Maeder Masiar Sistani Walter M. Weber A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States IEEE Journal of the Electron Devices Society Germanium reconfigurable field-effect transistor symmetric on-state wired-logic |
| title | A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States |
| title_full | A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States |
| title_fullStr | A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States |
| title_full_unstemmed | A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States |
| title_short | A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States |
| title_sort | run time reconfigurable ge field effect transistor with symmetric on states |
| topic | Germanium reconfigurable field-effect transistor symmetric on-state wired-logic |
| url | https://ieeexplore.ieee.org/document/10382178/ |
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