Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte
Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electro...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-05-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-023-00481-0 |