Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte
Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electro...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-05-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-023-00481-0 |
| _version_ | 1797274143534612480 |
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| author | Chansoo Yoon Gwangtaek Oh Sohwi Kim Jihoon Jeon Ji Hye Lee Young Heon Kim Bae Ho Park |
| author_facet | Chansoo Yoon Gwangtaek Oh Sohwi Kim Jihoon Jeon Ji Hye Lee Young Heon Kim Bae Ho Park |
| author_sort | Chansoo Yoon |
| collection | DOAJ |
| description | Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electrolyte, which can sustain both neuron and synaptic behavior depending on the identity of the active electrode. The Ag/PZT/La0.8Sr0.2MnO3 (LSMO) threshold switching memristor shows abrupt and volatile resistive switching characteristics, which lead to neuron devices with stochastic integration-and-fire behavior, auto-recovery, and rapid operation. In contrast, the Ni/PZT/LSMO memory switching memristor exhibits gradual, non-volatile resistive switching behavior, which leads to synaptic devices with a high on/off ratio, low on-state current, low variability, and spike-timing-dependent plasticity (STDP). The divergent behavior of the ECM devices is attributed to greater control of cation migration through the ultrathin ferroelectric PZT. Thus, ECM devices with an identical ferroelectric electrolyte offer promise as essential building blocks in the construction of high-performance neuromorphic computing systems. |
| first_indexed | 2024-03-07T14:54:09Z |
| format | Article |
| id | doaj.art-1708aceb8b284ddebf7737cea362762f |
| institution | Directory Open Access Journal |
| issn | 1884-4057 |
| language | English |
| last_indexed | 2024-03-07T14:54:09Z |
| publishDate | 2023-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | NPG Asia Materials |
| spelling | doaj.art-1708aceb8b284ddebf7737cea362762f2024-03-05T19:29:26ZengNature PortfolioNPG Asia Materials1884-40572023-05-0115111110.1038/s41427-023-00481-0Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyteChansoo Yoon0Gwangtaek Oh1Sohwi Kim2Jihoon Jeon3Ji Hye Lee4Young Heon Kim5Bae Ho Park6Division of Quantum Phases & Devices, Department of Physics, Konkuk UniversityDivision of Quantum Phases & Devices, Department of Physics, Konkuk UniversityDivision of Quantum Phases & Devices, Department of Physics, Konkuk UniversityDivision of Quantum Phases & Devices, Department of Physics, Konkuk UniversityCenter for Correlated Electron Systems (CCES), Institute of Basic Science (IBS)Graduate School of Analytical Science and Technology, Chungnam National UniversityDivision of Quantum Phases & Devices, Department of Physics, Konkuk UniversityAbstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electrolyte, which can sustain both neuron and synaptic behavior depending on the identity of the active electrode. The Ag/PZT/La0.8Sr0.2MnO3 (LSMO) threshold switching memristor shows abrupt and volatile resistive switching characteristics, which lead to neuron devices with stochastic integration-and-fire behavior, auto-recovery, and rapid operation. In contrast, the Ni/PZT/LSMO memory switching memristor exhibits gradual, non-volatile resistive switching behavior, which leads to synaptic devices with a high on/off ratio, low on-state current, low variability, and spike-timing-dependent plasticity (STDP). The divergent behavior of the ECM devices is attributed to greater control of cation migration through the ultrathin ferroelectric PZT. Thus, ECM devices with an identical ferroelectric electrolyte offer promise as essential building blocks in the construction of high-performance neuromorphic computing systems.https://doi.org/10.1038/s41427-023-00481-0 |
| spellingShingle | Chansoo Yoon Gwangtaek Oh Sohwi Kim Jihoon Jeon Ji Hye Lee Young Heon Kim Bae Ho Park Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte NPG Asia Materials |
| title | Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte |
| title_full | Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte |
| title_fullStr | Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte |
| title_full_unstemmed | Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte |
| title_short | Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte |
| title_sort | implementation of threshold and memory switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte |
| url | https://doi.org/10.1038/s41427-023-00481-0 |
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