Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electro...

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Bibliographic Details
Main Authors: Chansoo Yoon, Gwangtaek Oh, Sohwi Kim, Jihoon Jeon, Ji Hye Lee, Young Heon Kim, Bae Ho Park
Format: Article
Language:English
Published: Nature Portfolio 2023-05-01
Series:NPG Asia Materials
Online Access:https://doi.org/10.1038/s41427-023-00481-0

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