Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket
Abstract In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high I ON current. By optimizing the gate and source-contact overl...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Springer
2023-09-01
|
| Series: | Discover Nano |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-023-03904-7 |