THERMAL OXIDATION OF GaP AS A BASIS OF SELECTING THE CHEMICAL STIMULATING FUNCTIONS
GaP, like other AIIIBV semiconductors (GaAs and InP), is a promising compound for the creation of photodiodes, photodetectors, and other microelectronics devices. The goal of this work is to reveal the peculiarities of thermal oxidation of GaP in comparison with GaAs and InP and to substantiate reco...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Voronezh State University
2017-09-01
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| Series: | Конденсированные среды и межфазные границы |
| Subjects: |