Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D Electrodes

Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D Electrodes

Abstract Bottom‐gate and bottom‐contact n‐type and p‐type organic field‐effect transistors (OFETs) are simultaneously obtained by combining the ambipolar semiconductor film of diketopyrrolopyrrole‐based conjugated polymer (P4FTVT‐C32) with indium tin oxide (ITO) source/drain (S/D) electrodes. P4FTVT...

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Bibliographic Details
Main Authors: Jiangli Han, Xin Rong, Chenhui Xu, Yunfeng Deng, Yanhou Geng, Guifang Dong, Lian Duan
Format: Article
Language:English
Published: Wiley-VCH 2023-05-01
Series:Advanced Electronic Materials
Subjects:
ambipolar organic semiconductors
bar coating process
indium tin oxide (ITO) sources/drain electrodes
organic‐based CMOS inverters
Online Access:https://doi.org/10.1002/aelm.202201288

Internet

https://doi.org/10.1002/aelm.202201288

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