Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K desp...

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Bibliographic Details
Main Authors: Hanjong Paik, Zhen Chen, Edward Lochocki, Ariel Seidner H., Amit Verma, Nicholas Tanen, Jisung Park, Masaki Uchida, ShunLi Shang, Bi-Cheng Zhou, Mario Brützam, Reinhard Uecker, Zi-Kui Liu, Debdeep Jena, Kyle M. Shen, David A. Muller, Darrell G. Schlom
Format: Article
Language:English
Published: AIP Publishing LLC 2017-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5001839

Internet

http://dx.doi.org/10.1063/1.5001839

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