Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements
Near-ideal p-CdS/n-Si heterojunction band edge lineup has been investigated for the first time with aid of I-V and C-V measurements. The heterojunction was manufactured by deposition of CdS films prepared by chemical spray pyrolysis technique (CSP) on monocrystalline n-type silicon. The experimenta...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2009-12-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/877 |