A study on the diffusion properties of oxygen in Al and W-doped λ-Ta2O5
The formation energy of an oxygen vacancy and the diffusion barrier of an oxygen ion have a significant impact on the operating voltage and other parameters of resistive random access memory. In this research, n-type dopants and p-type dopants were, respectively, used to make comparative research on...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0064536 |