Local droplet etching on InAlAs/InP surfaces with InAl droplets
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs. These properties make GaAs QDs an ideal candidate as single photon and ent...
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-05-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0088012 |