Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Abstract La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temper...

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Bibliographic Details
Main Authors: Xing Wang, Hongxia Liu, Lu Zhao, Chenxi Fei, Xingyao Feng, Shupeng Chen, Yongte Wang
Format: Article
Language:English
Published: SpringerOpen 2017-03-01
Series:Nanoscale Research Letters
Subjects:
La2O3
ALD
Crystallization
Diffusion
Bandgap
Refractive index
Online Access:http://link.springer.com/article/10.1186/s11671-017-2018-8

Internet

http://link.springer.com/article/10.1186/s11671-017-2018-8

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