Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS<sub>2</sub> Growth to Facilitate Mass Scale Device Production

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS<sub>2</sub> Growth to Facilitate Mass Scale Device Production

Growth of monolayer WS<sub>2</sub> of domain size beyond few microns is a challenge even today; and it is still restricted to traditional exfoliation techniques, with no control over the dimension. Here, we present the synthesis of mono- to few layer WS<sub>2</sub> film of ce...

Full description

Bibliographic Details
Main Authors: Abid, Poonam Sehrawat, Christian M. Julien, Saikh S. Islam
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Nanomaterials
Subjects:
chemical
vapor deposition
graphene oxide
transition-metal dichalcogenides
WS<sub>2</sub>
Online Access:https://www.mdpi.com/2079-4991/11/1/220

Internet

https://www.mdpi.com/2079-4991/11/1/220

Similar Items