Insight into the nitrogen-vacancy center formation in type-Ib diamond by irradiation and annealing approach

Comprehending the microscopic formation of nitrogen vacancy (NV) centers in nitrogen-doped diamonds is crucial for enhancing the controllable preparation of NV centers and quantum applications. Irradiation followed by annealing simulations for a type-Ib diamond with a 900 ppm concentration of isolat...

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Detalhes bibliográficos
Principais autores: Taiqiao Liu, Fanglin Lyu, Tian Shao, Diwei Zou, Wei Shen, Yuzheng Guo, Yuan Zhong, Chaoyang Chen, Liangchen Yi, Zhaofu Zhang, Andy H Shen
Formato: Artigo
Idioma:English
Publicado em: IOP Publishing 2024-01-01
coleção:Materials Futures
Assuntos:
Acesso em linha:https://doi.org/10.1088/2752-5724/ad727a