Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold volta...

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Bibliographic Details
Main Authors: Maksym Dub, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap, Sergey Rumyantsev
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
AlGaN/GaN
quantum wells
grating gate
high electron mobility transistors
Online Access:https://www.mdpi.com/2072-666X/12/6/721

Internet

https://www.mdpi.com/2072-666X/12/6/721

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