Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method

Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method

With the increasing demand for modern high‐voltage electronic devices in electric vehicles and renewable‐energy systems, power semiconductor devices with high breakdown fields are becoming essential. β‐Gallium oxide (Ga2O3), which has a theoretical breakdown field of 8 MV cm−1, is being studied as a...

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Bibliographic Details
Main Authors: Jun‐Woo Lee, Jong Ho Won, Woosup Kim, Jwa‐Bin Jeon, Myung‐Yeon Cho, Sunghoon Kim, Minkyung Kim, Chulhwan Park, Weon Ho Shin, Kanghee Won, Sang‐Mo Koo, Jong‐Min Oh
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Small Structures
Subjects:
aerosol depositions
breakdown fields
Ga2O3 films
nozzle‐tilting methods
oxygen vacancies
thickness dependences
Online Access:https://doi.org/10.1002/sstr.202400321

Internet

https://doi.org/10.1002/sstr.202400321

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