Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams
Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper,...
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MDPI AG
2023-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/8/1510 |
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| author | Haotian Yang Min Liu Yingmin Zhu Weidong Wang Xianming Qin Lilong He Kyle Jiang |
| author_facet | Haotian Yang Min Liu Yingmin Zhu Weidong Wang Xianming Qin Lilong He Kyle Jiang |
| author_sort | Haotian Yang |
| collection | DOAJ |
| description | Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is proposed to characterize the residual stresses in SOI wafers in order to calculate the residual stress values based on the deformation of the beams. Based on this method, the residual strain of the MEMS beam, and thus the residual stress in the SOI wafer, were experimentally determined. The results were also compared with the residual stress results calculated from the deflection of the rotating beam to demonstrate the validity of the results obtained by this method. This method provides valuable theoretical reference and data support for the design and optimization of devices based on SOI-MEMS technology. It provides a lower-cost solution for the residual stress measurement technique, making it available for a wide range of applications. |
| first_indexed | 2024-03-10T23:43:19Z |
| format | Article |
| id | doaj.art-183a56f464a4499ba76974788db2bf68 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T23:43:19Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-183a56f464a4499ba76974788db2bf682023-11-19T02:12:40ZengMDPI AGMicromachines2072-666X2023-07-01148151010.3390/mi14081510Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever BeamsHaotian Yang0Min Liu1Yingmin Zhu2Weidong Wang3Xianming Qin4Lilong He5Kyle Jiang6School of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, ChinaSchool of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, ChinaSchool of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, ChinaSchool of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, ChinaSchool of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, ChinaXi’an Chuanglian Electronic Component (Group) Co., Ltd., Xi’an 710065, ChinaSchool of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, ChinaSilicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is proposed to characterize the residual stresses in SOI wafers in order to calculate the residual stress values based on the deformation of the beams. Based on this method, the residual strain of the MEMS beam, and thus the residual stress in the SOI wafer, were experimentally determined. The results were also compared with the residual stress results calculated from the deflection of the rotating beam to demonstrate the validity of the results obtained by this method. This method provides valuable theoretical reference and data support for the design and optimization of devices based on SOI-MEMS technology. It provides a lower-cost solution for the residual stress measurement technique, making it available for a wide range of applications.https://www.mdpi.com/2072-666X/14/8/1510SOIresidual stresscantilever beamMEMScharacterization |
| spellingShingle | Haotian Yang Min Liu Yingmin Zhu Weidong Wang Xianming Qin Lilong He Kyle Jiang Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams Micromachines SOI residual stress cantilever beam MEMS characterization |
| title | Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams |
| title_full | Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams |
| title_fullStr | Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams |
| title_full_unstemmed | Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams |
| title_short | Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams |
| title_sort | characterization of residual stress in soi wafers by using mems cantilever beams |
| topic | SOI residual stress cantilever beam MEMS characterization |
| url | https://www.mdpi.com/2072-666X/14/8/1510 |
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