An N-Type Pseudo-Static eDRAM Macro with Reduced Access Time for High-Speed Processing-in-Memory in Intelligent Sensor Hub Applications
This paper introduces an n-type pseudo-static gain cell (PS-nGC) embedded within dynamic random-access memory (eDRAM) for high-speed processing-in-memory (PIM) applications. The PS-nGC leverages a two-transistor (2T) gain cell and employs an n-type pseudo-static leakage compensation (n-type PSLC) ci...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-11-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/23/23/9329 |