A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV...

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Bibliographic Details
Main Authors: Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: Elsevier 2024-03-01
Series:Chip
Subjects:
AlGaN/GaN Schottky barrier diode
Double-barrier anode
Turn-on voltage
Ultra-high-voltage
Online Access:http://www.sciencedirect.com/science/article/pii/S2709472323000424

Internet

http://www.sciencedirect.com/science/article/pii/S2709472323000424

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