A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Chip |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2709472323000424 |
| _version_ | 1797287546953138176 |
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| author | Ru Xu Peng Chen Xiancheng Liu Jianguo Zhao Tinggang Zhu Dunjun Chen Zili Xie Jiandong Ye Xiangqian Xiu Fayu Wan Jianhua Chang Rong Zhang Youdou Zheng |
| author_facet | Ru Xu Peng Chen Xiancheng Liu Jianguo Zhao Tinggang Zhu Dunjun Chen Zili Xie Jiandong Ye Xiangqian Xiu Fayu Wan Jianhua Chang Rong Zhang Youdou Zheng |
| author_sort | Ru Xu |
| collection | DOAJ |
| description | GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (Von)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low Von of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications. |
| first_indexed | 2024-03-07T18:34:45Z |
| format | Article |
| id | doaj.art-184b0a5faca8417593d4349b32f97d1e |
| institution | Directory Open Access Journal |
| issn | 2709-4723 |
| language | English |
| last_indexed | 2024-03-07T18:34:45Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Chip |
| spelling | doaj.art-184b0a5faca8417593d4349b32f97d1e2024-03-02T04:55:23ZengElsevierChip2709-47232024-03-0131100079A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structureRu Xu0Peng Chen1Xiancheng Liu2Jianguo Zhao3Tinggang Zhu4Dunjun Chen5Zili Xie6Jiandong Ye7Xiangqian Xiu8Fayu Wan9Jianhua Chang10Rong Zhang11Youdou Zheng12The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaThe Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaSchool of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaCorenergy Semiconductor Incorporation, Suzhou 215600, ChinaThe Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaThe Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaThe Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaThe Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaSchool of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaSchool of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaThe Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (Von)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low Von of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.http://www.sciencedirect.com/science/article/pii/S2709472323000424AlGaN/GaN Schottky barrier diodeDouble-barrier anodeTurn-on voltageUltra-high-voltage |
| spellingShingle | Ru Xu Peng Chen Xiancheng Liu Jianguo Zhao Tinggang Zhu Dunjun Chen Zili Xie Jiandong Ye Xiangqian Xiu Fayu Wan Jianhua Chang Rong Zhang Youdou Zheng A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure Chip AlGaN/GaN Schottky barrier diode Double-barrier anode Turn-on voltage Ultra-high-voltage |
| title | A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure |
| title_full | A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure |
| title_fullStr | A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure |
| title_full_unstemmed | A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure |
| title_short | A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure |
| title_sort | lateral algan gan schottky barrier diode with 0 36 v turn on voltage and 10 kv breakdown voltage by using double barrier anode structure |
| topic | AlGaN/GaN Schottky barrier diode Double-barrier anode Turn-on voltage Ultra-high-voltage |
| url | http://www.sciencedirect.com/science/article/pii/S2709472323000424 |
| work_keys_str_mv | AT ruxu alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT pengchen alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT xianchengliu alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT jianguozhao alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT tinggangzhu alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT dunjunchen alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT zilixie alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT jiandongye alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT xiangqianxiu alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT fayuwan alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT jianhuachang alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT rongzhang alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT youdouzheng alateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT ruxu lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT pengchen lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT xianchengliu lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT jianguozhao lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT tinggangzhu lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT dunjunchen lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT zilixie lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT jiandongye lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT xiangqianxiu lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT fayuwan lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT jianhuachang lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT rongzhang lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure AT youdouzheng lateralalganganschottkybarrierdiodewith036vturnonvoltageand10kvbreakdownvoltagebyusingdoublebarrieranodestructure |