Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor

Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor

A novel photodetecting device architecture that combines the optoelectronic property advantages of a perovskite and the amplification properties of a Si metal–oxide–semiconductor field‐effect transistor (MOSFET) to innovate a photodetecting system with ultrahigh sensitivity, especially in low‐light...

Full description

Bibliographic Details
Main Authors: Jinbo Liu, Ross Haroldson, Grigorii Verkhogliadov, Dayang Lin, Qing Gu, Anvar A. Zakhidov, Walter Hu, Chadwin D. Young
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Photonics Research
Subjects:
metal–oxide–semiconductor field-effect transistors
perovskites
photodetectors
ultrasensitive
Online Access:https://doi.org/10.1002/adpr.202200034

Internet

https://doi.org/10.1002/adpr.202200034

Similar Items