1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, w...

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Bibliographic Details
Main Authors: Xia-Yida MaXueer, Yi-Ming He, Zun-Ren Lv, Zhong-Kai Zhang, Hong-Yu Chai, Dan Lu, Xiao-Guang Yang, Tao Yang
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Crystals
Subjects:
quantum dot laser
molecular beam epitaxy
p-modulation doping
optical feedback
Online Access:https://www.mdpi.com/2073-4352/10/11/980

Internet

https://www.mdpi.com/2073-4352/10/11/980

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