Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers

Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers

A power amplifier (PA) stands as a central module within the electronic information system (EIS), and any variation in a PA’s specifications has a direct impact on the EIS’s performance, especially in the face of temperature fluctuations. In examining the influence of PA specification changes on the...

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Bibliographic Details
Main Authors: Ruiliang Li, Shaohua Zhou, Cheng Yang, Jian Wang
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Micromachines
Subjects:
PA
temperature
SVM
model
CMOS
class-A
Online Access:https://www.mdpi.com/2072-666X/15/2/246

Internet

https://www.mdpi.com/2072-666X/15/2/246

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