Vacuum-ultraviolet (λ < 200 nm) photodetector array

Vacuum-ultraviolet (λ < 200 nm) photodetector array

Abstract The vacuum-ultraviolet (VUV, 10–200 nm) imaging photodetector (PD) based on the wide bandgap semiconductor (WBGS) can realize a more detailed observation of solar storms than the silicon ones. Here, an 8 × 8 VUV PD array based on the semiconductor AlN with an ultra-wide bandgap is presented...

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Bibliographic Details
Main Authors: Siqi Zhu, Zhuogeng Lin, Zhao Wang, Lemin Jia, Naiji Zhang, Wei Zheng
Format: Article
Language:English
Published: SpringerOpen 2024-03-01
Series:PhotoniX
Subjects:
Vacuum-ultraviolet detection
Photodetector array
Wide bandgap semiconductors
Imaging
Online Access:https://doi.org/10.1186/s43074-024-00120-z

Internet

https://doi.org/10.1186/s43074-024-00120-z

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